Gomeniuk Y. Transport and trapping of charge in MOS structures and MOSFETs with nanoscale high-k dielectrics.

Українська версія

Thesis for the degree of Candidate of Sciences (CSc)

State registration number

0424U000367

Thesis Registration Form

0424U000367.pdf

Applicant for

Specialization

  • 01.04.10 - Фізика напівпровідників і діелектриків

15-01-2025

Specialized Academic Board

Д 26.199.01.

V. Lashkaryov Institute of Semiconductor Physics of National Academy

Essay

The purpose of the work was to determine the charge carrier transfer mechanisms, to identify the features of charge capture in the gate dielectric of MOS structures and semiconductor devices, as well as to study the influence of technological operations, such as forming gas annealing of MOS structure samples or RF plasma annealing of junctionless MOSFETs. The object of the study was the phenomenon of charge carrier transfer and capture in the dielectric layer and at the “dielectric – semiconductor” interface. The effects in semiconductor structures and devices with a high-k dielectric as a gate dielectric layer were mainly studied, which is an urgent task for the introduction of novel materials into modern micro- and nanoelectronics. The following electrical test methods were used in the work: current-voltage characteristics (I-V), capacitance-voltage characteristics (C-V) and conductance vs. frequency method. As part of the work, a specialized measuring complex controlled by a PC was built and software was developed in the NI Labview environment for automated electrical measurements. The scientific novelty of the results obtained is as follows: the defectiveness of high-k dielectrics based on rare-earth metal oxides was determined and it was shown that the transport of carriers in MOS structures with Gd2O3 and Nd2O3 oxides corresponds to hopping conductivity through deep levels, their energy position in the dielectric band gap was determined; it was shown that for systems with Gd2O3, Nd2O3, LaLuO3 and LaSiOx on silicon, the formation of the SiOx transition layer at the “silicon - high-k dielectric” interface was observed; for the first time, the current transfer mechanisms in structures with LaLuO3 and LaSiOx layers were investigated and it was shown that the forward bias current through such dielectric layers is controlled by the Poole-Frenkel mechanism; It is shown that for Pd/Al2O3/In0.53Ga0.47As samples with a dielectric layer thickness of more than 5 nm, the current is determined by the Fowler-Nordheim mechanism, which indicates a better quality of the dielectric layer compared to other studied high-k dielectrics; it is shown for the first time that the energy distribution of the density of states in the SrTa2O6/In0.53Ga0.47As system is also typical for the MOS structures with Al2O3, which allows us to conclude that the nature of defects at the interface "high-k dielectric - In0.53Ga0.47As" is associated with intrinsic defects of the semiconductor surface and does not depend on the material of the deposited film; the operating characteristics of MOSFETs with high-k LaLuO3 and Al2O3 dielectrics were obtained, which indicates their suitability for use as a gate dielectric; for field-effect transistors with high-k LaLuO3 dielectric, the carrier mobility values in the front and bottom channels of the transistor were evaluated, and the surface states density at the front (LaLuO3/Si) and bottom (SiO2/Si) interface were obtained, which demonstrates a higher density of surface states at the “high-k dielectric – silicon” interface compared to the SiO2/Si interface. The practical significance of the results obtained is expressed in the following: it is shown that for MOS structures with high leakage current it is advisable to use corrected C-V characteristics and also a method of correcting the Gp/ω vs. the frequency ω curves is proposed when determining the density of surface states; the optimal thickness (10 nm) of the Al2O3 layer deposited on the In0.53Ga0.47As substrate by the ALD method is found; it is shown that low-temperature RF plasma treatment is an effective method for improving the quality of MOSFETs based on In0.53Ga0.47As with Al2O3 as a gate dielectric, which leads to a decrease in the charge in the dielectric, a decrease in the density of states at the dielectric-semiconductor interface, and a decrease of the series resistance of the contact to the In0.53Ga0.47As semiconductor layer

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Research papers

Gomeniuk, Y. V., Gomeniuk, Y. Y., Rudenko, T. E., Okholin, P. N., Glotov, V. I., Nazarova, T. M., Djara, V., Cherkaoui, K., Hurley, P. K., Nazarov, A. N. (2019) Effect of Low Temperature RF Plasma Treatment on Electrical Properties of Junctionless InGaAs MOSFETs. ECS Journal of Solid State Science and Technology, 8(2), Q24–Q31. DOI: 10.1149/2.0181902jss

Gomeniuk, Y. V., Gomeniuk, Y. Y., Okholin, P. N., Nazarova, T. M., Djara, V., Cherkaoui, K., Hurley, P. K., Nazarov, A. N. (2018) Low-Temperature RF Plasma Treatment Effect on Junctionless Pd-Al2O3-InGaAs MISFET Operation. ECS Transactions, 85(8), 137–142. DOI: 10.1149/08508.0137ecst

Gomeniuk, Y. V., Gomeniuk, Y. Y., Kondratenko, S. V., Rudenko, T. E., Vasin, A. V., Rusavsky, A. V., Slobodian, O. M., Tyagulskyy, I. P., Kostylyov, V. P., Vlasiuk, V. M., Tiagulskyi, S. I., Yatskiv, R., Lysenko, V. S., Nazarov, A. N. (2023) Effect of PEDOT:PSS Layer Deposition on Electrical and Photoelectrical Properties of n+‑ZnO/n‑Si Heterostructure. Journal of Electronic Materials, 52, 3112–3120. DOI: 10.1007/s11664-023-10276-2

Lin, J., Gomeniuk, Y. Y., Monaghan, S., Povey, I. M., Cherkaoui, K., O’Connor, É., Power, M., Hurley, P. K. (2013) An Investigation of Capacitance-Voltage Hysteresis in Metal/High-k/In0.53Ga0.47As Metal-Oxide-Semiconductor Capacitors. Journal of Applied Physics, 114(14), 144105 DOI: 10.1063/1.4824066

Gomeniuk, Y. Y., Gomeniuk, Y. V., Nazarov, A. N., Monaghan, S., Cherkaoui, K., O’Connor, É., Povey, I., Djara, V., Hurley, P. K. (2013) Electrical Properties and Charge Transport in the Pd/Al2O3/InGaAs MOS Structure. ECS Transactions, 58(7), 379–384. DOI: 10.1149/05807.0379ecst

O’Connor, É., Cherkaoui, K., Monaghan, S., O’Connell, D., Povey, I., Casey, P., Newcomb, S. B., Gomeniuk, Y. Y., Provenzano, G., Crupi, F., Hughes, G., Hurley, P. K. (2012) Observation of Peripheral Charge Induced Low Frequency Capacitance-Voltage Behaviour in Metal-Oxide-Semiconductor Capacitors on Si and GaAs Substrates. Journal of Applied Physics, 111(12), 124104 DOI: 10.1063/1.4729331

Gomeniuk, Y. Y., Gomeniuk, Y. V., Tyagulskii, I. P., Tyagulskii, S. I., Nazarov, A. N., Lysenko, V. S., Cherkaoui, K., Monaghan, S., Hurley, P. K. (2011) Transport and Interface States in high-k LaSiOx Dielectric. Microelectronic Engineering, 88(7), 1342–1345. DOI: 10.1016/j.mee.2011.03.089

Zhang, P. F., Nagle, R. E., Deepak, N., Povey, I. M., Gomeniuk, Y. Y., O’Connor, E., Petkov, N., Schmidt, M., O’Regan, T. P., Cherkaoui, K., Pemble, M. E., Hurley, P. K., Whatmore, R. W. (2011) The Structural and Electrical Properties of the SrTa2O6/In0.53Ga0.47As/InP System. Microelectronic Engineering, 88(7), 1054–1057. DOI: 10.1016/j.mee.2011.03.118

Gomeniuk, Y. Y., Gomeniuk, Y. V., Nazarov, A. N., Hurley, P. K., Cherkaoui, K., Monaghan, S., Hellström, P. E., Gottlob, H. D. B., Schubert, J., Lopes, J. M. J. (2011) Electrical Properties of high-k LaLuO3 Gate Oxide for SOI MOSFETs. Advanced Materials Research, 276, 87–93. DOI: 10.4028/www.scientific.net/amr.276.87

Gomeniuk, Y. Y., Gomeniuk, Y. V., Nazarov, A. N., Lysenko, V. S., Osten, H. J., Laha, A. (2011) Interface and Bulk Properties of high-k Gadolinium and Neodymium Oxides on Silicon. Advanced Materials Research, 276, 167–178. DOI: 10.4028/www.scientific.net/amr.276.167

Gomeniuk, Y. Y., Gomeniuk, Y. V., Nazarov, A. N., Hurley, P. K., Cherkaoui, K., Monaghan, S., Gottlob, H., Schmidt, M., Schubert, J., Lopes, J. Marcelo. J., Engström, O. (2010). Electrical Properties of LaLuO3/Si(100) Structures Prepared by Molecular Beam Deposition. ECS Transactions, 33(3), 221–227. DOI: 10.1149/1.3481609

Gomeniuk, Y. Y., Gomeniuk, Y. V., Nazarov, A., Lysenko, V., Osten, H. J., Laha, A. (2009). Interface and Bulk Properties of MBE-Grown Rare-Earth Metal Oxides on Silicon. ECS Transactions, 25(6), 353–358. DOI: 10.1149/1.3206634

Nazarov, A. N., Gomeniuk, Y. V., Gomeniuk, Y. Y., Lysenko, V. S., Gottlob, H. D. B., Schmidt, M., Lemme, M. C., Czernohorsky, M., Osten H. J. (2008) Novel hysteresis effect in ultrathin epitaxial Gd2O3 high-k dielectric, Semiconductor Physics, Quantum Electronics & Optoelectronics //Б, 11, 324–328

Nazarov, A. N., Gomeniuk, Y. V., Gomeniuk, Y. Y., Gottlob, H. D. B., Schmidt, M., Lemme, M. C., Czernohorsky, M., Osten, H. J. (2007). Charge Trapping in Ultrathin Gd2O3 high k Dielectric. Microelectronic Engineering, 84(9–10), 1968–1971. DOI: 10.1016/j.mee.2007.04.136

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