Shcherban N. Сontrolled modification of electrophysical characteristics of silicon microcrystals by doping with impurities of transition metals for sensor engineering

Thesis is devoted to the establishment of regularities of change between crystal magnetoresistance and its spin ordering and revealing of correlation between polarization effects and peculiarities of changes of electrophysical, magnetic properties of boron - doped silicon microcrystals to concentrations near metal - dielectric transition are the basis of the concept of development and forecasting of properties of modern devices of microsystem technology. The dissertation solves specific scientific problems of development of new approaches to synthesis and controlled modification of functional nanomaterials doped with transition metals on the basis of filamentary p-type silicon and establishment of regularities of change of their characteristics under the influence of external perturbations for spintronics and sensory technology elements. importance for automation and instrumentation, namely: theoretically evaluated and experimentally confirmed the occurrence and behavior of transition metal impurities in silicon microcrystals and optimized technological methods for creating doped filamentous silicon crystals to create sensitive elements of sensors; the electrical conductivity, magnetoresistance and magnetization of deformed and undeformed doped silicon microcrystals in a wide range of temperatures (4.2–300 K) and magnetic fields (up to 14 T) were studied, incl. to create semiconductor elements of magnetoelectronics; Sensor electronics devices based on doped silicon microcrystals modified with magnetic impurities have been developed, using the results of experimental and theoretical studies of filamentary silicon, including sensitive elements of multifunction sensors are offered.