Dziuba V. Features of indium nanosystems on cleavage surfaces of chalcogenide semiconductors with natural nanostructured matrices.

Українська версія

Thesis for the degree of Doctor of Philosophy (PhD)

State registration number

0826U002750

Thesis Registration Form

0826U002750.pdf

Applicant for

Specialization

  • 105 - Прикладна фізика та наноматеріали

25-06-2026

Specialized Academic Board

PhD 13784

Ivan Franko National University of Lviv

Essay

The dissertation is devoted to the study of the features of indium nanosystems based on cleavage surfaces (0001) of InSe and (0001) Sb2Te3 with naturally nanostructured matrices, as well as to the investigation of the regularities of their formation in the solid-state wetting process. The elemental and phase composition, as well as the electronic energy structure of the (0001) InSe and (0001) Sb2Te3 crystal cleavage surfaces, were investigated using scanning tunneling microscopy and spectroscopy (STM/STS), low-energy electron diffraction (LEED), X-ray photoelectron spectroscopy (XPS), and density functional theory (DFT) within the generalized gradient approximation (GGA). A rhombohedral crystal structure of Sb2Te3 and the structural stability of the (0001) cleavage surface, which does not undergo reconstruction after cleavage under ultra-high vacuum and at room temperature, were established. The Sb2Te3 surfaces were shown to serve as templates for the self-organization of triangular indium nanostructures during solid-state dewetting. Their formation was found to be governed by the surface relief and symmetry, while the size distribution is described by the Gibbs–Thomson effect. XPS analysis confirmed a nearly stoichiometric Sb2Te3 surface contaminated mainly by carbon, as well as the presence of antimony and tellurium oxide phases. The investigated sample was found to be two-phase, containing tellurium and Sb2Te3. Heating above 300 °C under ultra-high vacuum results in surface sublimation, erosion, and partial recrystallization of tellurium. The electronic band structure, density of states, and effective masses of charge carriers were calculated for three 2D-InSe polytypes. All polytypes were shown to exhibit higher electron mobility than hole mobility, while γ-InSe possesses the lowest electron effective mass and, consequently, the highest carrier mobility. The kinetics of indium nanostructure formation on the InSe (0001) surface were also investigated. An island growth mechanism following the Volmer–Weber model was identified. The key factors governing the formation of ordered nanostructures on Sb2Te3 and InSe surfaces were found to be the symmetry of the surface relief, the amount of deposited indium, the annealing temperature, and the annealing duration.The practical significance of this work lies in identifying the mechanisms of indium nanostructure formation on Sb2Te3 and InSe cleavage surfaces. These materials can be used as reliable matrices for constructing stable nanosystems, which is critical for modern nanoelectronics. The findings are important for studying methods of forming low-dimensional metallic nanosystems based on chalcogenide semiconductors used as templates.

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Research papers

1. Galiy, P. V., Nenchuk, T. M., Ciszewski, A., Mazur, P., Dzyuba, V. I., Makar, T. R., & Tsvetkova, O. V. (2022). Solid state dewetting application for In/ (0001) Sb2Te3 2D layered semiconductor nanosystem formation. Materials Today: Proceedings, 62(9), 5753-5758. (Scopus, Q2) https://doi.org/10.1016/j.matpr.2022.01.490

2. Galiy, P. V., Nenchuk, T. M., Ciszewski, A., Mazur, P., Dzyuba, V. I., Makar, T. R., & Tsvetkova, O. V. (2022). Solid state dewetting application for In/(0001) Sb2Te3 nanosystem formation. Molecular Crystals and Liquid Crystals, 750(1), 50-59. (Scopus, Q4) https://doi.org/10.1080/15421406.2022.2073036

3. Tuziak, O. Ya., Dzyuba, V. I, Galiy, P. V., & Nenchuk, T. M. (2025). Calculation of the band structure and its parameters for 2D indium monoselenide. Chemistry, Physics and Technology of Surface, 16(4), 581–589. (Scopus, Q4) https://doi.org/10.15407/hftp16.04.581

4. Галій, П. В., Ненчук, Т. М., Макар, Т. Р., Дзюба, В. І., & Цвєткова, О. В. (2024). Спосіб одержування лінійних (1D) індієвих структур на наноструктурованій поверхні In₄Se₃ (Патент на корисну модель № 155721). Україна. Заявл. 25.05.2023; опубл. 03.04.2024, Бюл. № 14.

5. Galiy, P. V., Nenchuk, T. M., Ciszewski, A., Mazur, P., Dzyuba, V. I., & Makar, T. R. (2021, August 25–27). Solid state dewetting application for In/ (0001) Sb2Te3 2D layered semiconductor nanosystem formation. 9th International Conference "Nanotechnologies and Nanomaterials" (NANO-2021), Lviv, Ukraine, 307. [Дистанційна участь, стендова доповідь]

6. Дзюба, В. І., Галій, П. В., Ненчук, Т. М., & Макар, Т. Р. (2022, 4 лютого). Нові наносистеми на основі шаруватих напівпровідників – In0/ (0001) Sb2Te3. Звітна наукова конференція університету за 2021 рік, Львів, Україна, 121. [Очна участь, усна доповідь]

7. Dzyuba, V. I., Galiy, P. V., Nenchuk, T. M., Mazur, P., & Makar, T. R. (2022, May 14–16). Quantitative analysis of interface layer formation In/ (0001) Sb2Te3 from data acquired by scanning tunneling microscopy study. VIІ Міжнародна науково-практична конференція «Напівпровідникові матеріали, інформаційні технології та фотовольтаїка», Кременчук, Україна, 54-55. [Дистанційна участь, стендова доповідь]

8. Dzyuba, V. I., Galiy, P. V., Nenchuk, T. M., Ciszewski, A., Mazur, P., & Makar, T. R. (2022, May 23–25). Ni/(0001)InSe 2D Nanosystem on Cleaved Surface of InSe Layered Semiconductor Crystal Intercalated by Nickel [Poster presentation]. 2022 MRS Spring Meeting, Honolulu, Hawai`I. [Дистанційна участь, стендова доповідь]

9. Galiy, P. V., Nenchuk, T. M., Ciszewski, A., Mazur, P., Dzyuba, V. I., & Makar, T. R. (2022, May 30–June 3). 2D layered chalcogenide crystals’ surfaces application as templates for indium deposited nanosystems formation. E-MRS 2022 Spring Meeting, Strasbourg, France. [Дистанційна участь, стендова доповідь]

10. Galiy, P. V., Nenchuk, T. M., Ciszewski, A., Mazur, P., Dzyuba, V. I., & Makar, T. R. (2022, August 25 – 27). Solid indium deposited nanosystems formation on 2D layered chalcogenide crystals’ surfaces. 10th International Conference "Nanotechnologies and Nanomaterials" (NANO-2022), Lviv, Ukraine, 298. [Очна участь, стендова доповідь]

11. Galiy, P. V., Nenchuk, T. M., Ciszewski, A., Mazur, P., Dzyuba, V. I., & Makar, T. R. (2023, August 16–19). Studies of indium nanostructures growth models on A3B6 layered template. 11th International Conference "Nanotechnologies and Nanomaterials" (NANO-2023), Bukovel, Ukraine, 376. [Очна участь, стендова доповідь]

12. Makar, T. R., Galiy, P. V., Nenchuk, T. M., Ciszewski, A., Mazur, P., & Dzyuba, V. I. (2023, September 18–21). Indium nanostructures growth mechanisms on A3B6 layered templates. E-MRS 2023 Fall Meeting, Warsaw, Poland. [Дистанційна участь, стендова доповідь]

13. Galiy, P. V., Nenchuk, T. M., Mazur, P., Dzyuba, V. I., Makar, T. R., & Poplavskyy, O. P. (2024, August 21–24). Fractal analysis in the surface nano engineering of A3B6 layered templates. 12th International Conference "Nanotechnologies and Nanomaterials" (NANO-2024), Uzhhorod, Ukraine. [Очна участь, стендова доповідь]

14. Дзюба, В. І., Галій, П. В., Тузяк, О.Я., & Макар, Т. Р., (2025, 5 лютого). Особливості зонно-енергетичної структури різних політипів шаруватого кристала InSe. Звітна наукова конференція університету за 2024 рік, Львів, Україна, 143. [Очна участь, усна доповідь]

15. Galiy, P. V., Tuziak, O. Ya., Nenchuk, T. M., & Dzyuba, V. I. (2025, October 6-10). Theoretical estimation of carrier mobility in 2D-InSe polytypes. XX International Freik Conference: Physics and Technology of Thin Films and Nanosystems, Vasyl Stefanyk Carpathian National University, Ivano-Frankivsk, Ukraine, 76. [Дистанційна участь, стендова доповідь]

16. Tuziak, O.Ya, Dziuba V.I., Galiy, P.V., & Nenchuk, T.N. (2025, May 28-29) Calculation of the band structure and its parameters for 2D indium monoselenide. Ukrainian Conference with International Participation "Chemistry, Physics and Technology of Surface", Kyiv, Ukraine, 112. [Дистанційна участь, стендова доповідь]

17. Дзюба, В. І., Тузяк О.Я., & Галій, П. В. (2026, 4 лютого). Розрахунок зонно-енергетичної структури та електронних спектрів низьковимірної 2D системи моноселеніду індію. Звітна наукова конференція університету за 2025 рік, Львів, Україна, 146. [Очна участь, усна доповідь]

18. Galiy, P. V., Nenchuk, T. M., Ciszewski, A., Mazur, P., Tsvetkova, O. V. Dzyuba, V. I., & Makar, T. R., (2022). Template directed formation of metallic In/(0001) surface of Sb2Te3 2D layered semiconductor self-assembling nanosystem. Electronics and Information Technologies, 18, 53-64. http://dx.doi.org/10.30970/eli.18.6

19. Galiy, P. V., Nenchuk, T. M., Ciszewski, A., Mazur, P., Dzyuba, V. I., & Makar, T. R. (2024). Studies of indium nanostructures growth models on A3B6 layered templates. Molecular Crystals and Liquid Crystals, 768(15), 799–808. (Scopus, Q4) https://doi.org/10.1080/15421406.2024.2361970

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