Dalakyan A. ELECTROOPTICAL PHENOMENA OF HOLES IN UNIAXILLY DEFORMED GERMANIUM

Українська версія

Thesis for the degree of Candidate of Sciences (CSc)

State registration number

0400U002657

Thesis Registration Form

0400U002657.pdf

Applicant for

Specialization

  • 01.04.07 - Фізика твердого тіла

12-10-2000

Specialized Academic Board

Д 11.184.01

Essay

The dissertation is devoted to investigations of inverse redistribution of charge carriers in uniaxially deformed crystal of p-Ge for amplification and generation of light in terahertz spectral range. Experiments at coincided directions of electric field and uniaxial pressure discovered the determinative role of impurity for the formation of inverted distributions of holes. It is shown that generation arises at essentially lower values of pressure in the case of crossed directions of electric field and uniaxial pressure then at coincided directions of them. Complex of obtained results evidences for arising resonant impurity states in continuous energy spectrum of the valence band of uniaxially deformed crystal and that the intracenter inversion is the main reason of far IR generation.

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