Zayika V. Phenomena of localization and migration of charge carriers in amorphous films of siliconorganic compounds

It was shown by the low-temperature thermally stimulated luminescence and fractional glow techniques that in amorphous films of siliconorganic compounds intrinsic tail states of the density of state distribution act as charge carrier traps. The existence of a quasi-continuous Gaussian shaped distribution of the density of state was found. On the basis of the obtained results, the parameters of the energetic disorder were determined for series of films of siliconorganic compounds.Determined were the factors which influence the parameter of the energetic disorder in amorphous films of siliconorganic compounds. Photodegradation of poly[methyl(phenyl)silylene] was studied. It was demonstrated that UV irradiation of poly[methyl(phenyl)silylene] films at room temperature leads to the formation of deep charge carrier traps. Experimental conditions at which photodegradation is a completely reversible process were determined.