Nadtochij A. Investigation of nonlinear absorption of ultrasound and its interaction with defects of structure in solid states

Українська версія

Thesis for the degree of Candidate of Sciences (CSc)

State registration number

0401U000209

Thesis Registration Form

0401U000209.pdf

Applicant for

Specialization

  • 01.04.07 - Фізика твердого тіла

25-12-2000

Specialized Academic Board

Д26.001.23

Essay

The dissertation is devoted to study ultrasound absoption in alkaline-halide crystals, silicon and lithium niobate. The influence of ultrasound treatment on micro-plastic properties of superficial layer in dislocation-free silicon is investigated. The experimental technique consists in ultrasound treatment of bulk Cz-silicon and following observation of dislocation dynamics with the help of artificially introduced dislocations. The samples were p-type material bars with [111] faces. Ultrasound treatment leads to formation of a debris-layer of about 100 cm thick, and point defect clusters at the sample surfaces. It was investigated the influence of ultrasound treatment on dislocation mobility in silicon crystals. Our research was based on dislocations in silicon crystals induced by scratches. It was found that the ultrasound treatment (UST) of silicon crystals results in changes in the dislocation displacement speed under the constant mechanical load. When applying compressing stress, UST makes the di slocation speed slower, while stretching stress accelerates it. The UST has decreased the energy of thermo-activated dislocation movements. Before the treatment the energy is equal to 2.02 eV, and after UST the energy is 1.76 eV.

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