Romanyuk A. Properties of modified carbon films and Si-based layered structures

Українська версія

Thesis for the degree of Candidate of Sciences (CSc)

State registration number

0401U002695

Thesis Registration Form

0401U002695.pdf

Applicant for

Specialization

  • 01.04.07 - Фізика твердого тіла

28-09-2001

Specialized Academic Board

К.26.199.01

Essay

Properties of diamond-like and diamond films, Si-based layered structures, and mechanisms of the film modification under action of different treatments were studied. The mechanisms of hardness drastic increasing for the films subjected to high-dose nitrogen implantation has been established. For the first time using low-temperature supersonic arcjet method diamond films on Si substrates are synthesied. The process of ion-beam induced formation of Si layered structures with a buried SiC layer was investigated and the mechanism of oxygen-stimulated effect has been proposed. New getters for silicon were proposed and the mechanisms of their action were analysed. Practical application of the results obtained have been demonstrated for silicon solar cells.

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