Lytvyn Y. The investigation of electron properties the layer structures with diamond-like carbon and oxide films on base silicon

The resonant tunneling phenomenon was obtained in multi-layer structures with delta-doped cezium and silicon layer at wide range electric field . The experimental and theoretical investigations of dependencies the emission current at thickness barriers (30 angstrom) and quantum well (20 angstrom) are reported in this thesis. It is established that, the physical properties dimond-like carbon films (DLC) films is strongly dependencies with concentration nitrogen in gas mixture. Thus, the nonmonotonous dependences the work function and threshold voltage with nitrogen content was obtain in detail. In case super thin DLC films (8 nm), to be obtained resonant tunneling phenomenon, due to emerging quantum well on the surface DLC film and vacuum. The resonans tunneling phenomenon of current electron field emission with structures forming by laser modification silicon surface, as structures with nanocomposite covering SixOyNz(Si) was invastigated in detail.