3 . Recombination mechanisms transformation, quantum efficiency enhancement and generation of radiation in Hg1-xCdxTe and InSb caused by uniaxial strain.

Українська версія

Thesis for the degree of Candidate of Sciences (CSc)

State registration number

0402U000882

Thesis Registration Form

0402U000882.pdf

Applicant for

Specialization

  • 01.04.07 - Фізика твердого тіла

15-03-2002

Specialized Academic Board

К 26.199.01

Essay

The thesis is devoted to investigations of uniaxial elastic strain influence on photoelectrical properties and recombination mechanisms in narrow gap semiconductors Hg1-xCdxTe and InSb. Stimulated radiation in the range of 80-100 mm was observed i n uniaxially stressed zero-gap Hg1-xCdxTe (x = 0.10-0.14) under conditions of impact ionization induced by an electric field. The abrupt increase in emission occurs under the threshold values of elastic strain and electric field strength and is followed by an abrupt increase in the current in the sample. The field and deformation dependences of spontaneous radiation are also determined. The mechanism of the effect observed is suggested taking into account the transformation of energy bands and impurity acceptor levels by the uniaxial elastic stress. Temperature and deformation dependence of photoconductivity and photoelectromagnetic effect in the p-Hg1-xCdxTe with x = 0.20-0.22 at low temperatures are measured. It was shown, that the recombination tran sitionin the T < 30-40 K temperature range can be interpreted within the two level Shockly-Reed's model taking into consideration the holes freezing-out effect. The second recombination center is the non-Coulombic type acceptor with ionisation energy ab out 10-15 meV. Uniaxial strain in narrow gap semiconductors decreases the band-to-band radiationless Auger recombination dramatically due to transformation of valence band and increases quantum efficiency radiation of recombination essentially.

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