Kuzmich A. Photothermoacoustic and photoelectric microscopy of silicon structures

The dissertation work deals with a research in silicon - based structure by compliance photothermoacoustic and photoelectric microscopy. Si-based structures - n-type of epitaxial build-up inside a p-type substrate, interface obtained by the boron and phosphor implantation, and a near-top crack region - have been studied by means of combined photothermoacoustic and photoelectric microscopy. Conclusion is made that the most probable cause of the thermal-wave visualization of epitaxial regions is elastic stresses arising in these regions during their making. It is shown that spatial distribution of the elastic stresses arisen during the ion-beam implantation is visualized as a sequence of the thermal waves traveling. In the near-top region of crack the inhomogeneities of thermoelastic and electrical properties, which extend to some hundreds of microns, may be detected by thermal waves and electron-hole plasma waves as well. A spatial periodicity of the thermoelastic properties of the near-top crack regionis found; its period turned out to be about 85 (m. The linear dependence of photothermoacoustic signal of logarithm for implanted boron and phosphor ions concentrations was found experimentally, for doses 1,8 10 11 6 10 13 cm- 2