Kravchuk N. Temperature transducers on base of the reactive properties metal- oxide-semiconductor structures.

Object of research - development of theoretical bases, methods and expedients of pinch of metrological characteristics of temperature transducers; a subject of research- temperature transducers on the basis of jet properties of structures MOS; the methods of research - theoretical methods based on the theory of function of a complex variable, differential and integral calculus, on the computational methods of linear electric chains, on the stability theory of oscillatory systems, on the theory of probability, and the experimental researchs of a subject of research; the purpose of research - making of primary transducers of temperature with frequency exit. Transducers are compatible with microelectronic technology and use a functional connection of an impedance transistors from temperature ; Theoretically - practical results - further development of the methodology of making transducers with high sensitiveness to change of temperature and with frequence exit in a direction of development new circuitrytechnically of the solutions concerning of making temperature transducers of an autooscillatory type on the basis of jet properties a semiconductor MOS - structures; the research methods of jet properties of МOS-structures and the methods of deriving metrological characteristics of measuring transducers; rate of introduction: between the branch; sphere of use - development of methods and devices of measuring of temperature, which can be used in measuring-control technique.