Abramov A. Impurity states in uniaxially stressed bulk crystal solid with complex energy structure (on example of p-Ge).

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Thesis for the degree of Candidate of Sciences (CSc)

State registration number

0403U000842

Thesis Registration Form

0403U000842.pdf

Applicant for

Specialization

  • 01.04.07 - Фізика твердого тіла

27-02-2003

Specialized Academic Board

Д 11.184.01

Essay

Uniaxially stressed p-Ge. Investigations of impurity states and their influence on the kinetic and optical properties of charge carriers in uniaxially deformed crystal with complex energy structure. The Methods of study - theoretical: method of efficient mass, method of functions Грина. Theoretical and practical results - it is calculated factor of light absorption by the deep impurity centers in uniaxially stressed p-Ge and GaAs it is calculated to dependencies binding energy and broadening of resonant impurity states for impurity center, as well as cross-section of impurity scattering; it is calculated polarization de-pendencies of spontaneous emission from uniaxially stressed p-Ge. Novelty - calculations they are organized for impurity center with screened Coulomb interaction; obtained results indicate the alteration of emission mechanism with growth of uniaxial stress. The Sphere of use - physics of lazers, physics of inverted distribution in tense structures.

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