Moiseenko N. Nanoparticles of Silicon in Aluminum crystal lattice

Українська версія

Thesis for the degree of Candidate of Sciences (CSc)

State registration number

0404U002963

Thesis Registration Form

0404U002963.pdf

Applicant for

Specialization

  • 01.04.07 - Фізика твердого тіла

15-06-2004

Specialized Academic Board

Д 41.052.06

Essay

Ab initio calculations were performed to obtain the inter-atomic potentials for Si-Al interaction in aluminium. It was found that of Si3 cluster is an initial atomic configuration that leads to nucleation and growth of Si precipitates. Elucidated the diamond-like hybrid character of Si-Al bonds in the case when Si atoms form at least Si2 cluster in Al lattice. These bonds are close to covalent bonds in Si crystal. In conditions of quenching and neutron irradiation diffusion processes that ensure precipitation of Si atoms are observed at relatively low temperatures. The explanation of such low-temperature diffusion is given using a mechanism of divacancy diffusion. It was found also that Si precipitates growth in conditions of neutron irradiation of Al is limited by diffusion of Si atoms to precipitates in Al lattice.

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Files

aref.doc

dis1.doc

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