Patsay B. Influence of local structural defects on dispersion of X-rays and magnetic susceptibility of crystals Cz-Si

Українська версія

Thesis for the degree of Candidate of Sciences (CSc)

State registration number

0405U000399

Applicant for

Specialization

  • 01.04.07 - Фізика твердого тіла

24-01-2005

Specialized Academic Board

Д 26.001.23

Taras Shevchenko National University of Kyiv

Essay

The object is structural defects which arise up in the crystals of Si; the purpose is study of X-rays dispersion on structural defects; the methods are triple-crystal diffractometry, magnetic receptivity; the novelty - influence of different treatments was studing on an imperfect structure in Cz-Si; the main results - the method of parameters of defects' calculation is developed; industries are physics of solid, physicist of semiconductors and dielectrics.

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