Klyahina N. Forming structure and physical properties of nitride films, received by methods of jet dispersion on substrates Si, Ni, Ti, Ta, Mo and W

Klyahina N.A. "Forming structure and physical properties of nitride films, received by methods of jet dispersion on substrates Si, Ni, Ti, Ta, Mo and W" - Manuscript. The dissertation on competition of a scientific degree of the candidate of physical and mathematical sciences on a specialty 01.04.07 - physics of a solid body. - Donetsk national University, Donetsk, 2005. In the this work the study of influence of different methods of jet dispersion on phase structure, kinetic of growth and property thin- nitride films of coverings is has been spent. It was experimentally shown, that the films received by various methods of reactive sputtering on different substrates were multiphase and multilays, and the distinction in structure and properties of nitride films was caused by different energy of ions of nitrogen and titanium and different density of their flow, kinetic and temperature of increase films. It was established, that the using of the II method was formed of a film having good mechanical, electrical and electrochemical properties. A film received by the КІВ method, had the highest dispersion, hardness by corrosion stability. The films received by II method on substrates of refractory metals possess the maximal specific resistance. It was discovered, that in the II method the material of a substrate rendered appreciable influence on the phase composition and structure of growthing films, in case of the КІВ method, this influence was insignificant. For the first time theoretically and experimentally were found geteroepitaxial of temperatures for pairs Si/TiN and Si/AlN. It was established, that the kinetic of the increasing of films in all cases was described by the linear law with a various constant of growth. It was recommended to use the films at manufacturing of the multilays BIS. Keywords: a film, nitride, ionic implantation, magnetron sputtering, condensation and ion-bombardment.