Mazunov D. Phase transformations in silicon oxide films due to change of oxygen structural arrangement

Українська версія

Thesis for the degree of Candidate of Sciences (CSc)

State registration number

0405U002199

Applicant for

Specialization

  • 01.04.07 - Фізика твердого тіла

24-05-2005

Specialized Academic Board

К 26.199.01

Essay

The comprehensive investigation of the effect of phase-structural transformations in silicon oxide films has been presented. It is established that after high temperature treatment slightly oxidized Si-Oy-Si4-y molecular complexes lose oxygen atoms transforming to Si-Si4 tetrahedra. Simultaneously, oxygen atoms released interact with heavily oxidized silicon-oxygen complexes transforming them to Si-O4 tetrahedra. As a result, segregation of the Si and SiO2 phases takes place in matrix.

Files

Similar theses