Oberemok O. Investigation of the diffusion mechanisms of implanted dopants in the layered silicon-based structures at non-equilibrium point defect concentration.

The influence of non-equilibrium point defect concentration on the dopant gettering, redistribution, enhanced diffusion, electrical activation near to interfaces in solid were investigated. Also the ultrasound (US) treatment action during argon or boron implantation on the point defects diffusion were studied. The layer-by-layer high-frequency sputtering technique of the dielectric targets was developed. It is shown that point defects formed as a result of the rapid thermal annealing (RTA) of the oxygen or carbon implanted SiO2/Si structures allow to control the behavior of the implanted dopants near interfaces. The arsenic electrical activation in silicon was studied after isochoric and isothermal annealing. It is found that porous Si + Al/Si structure is the efficient gettering layer for silicon implanted by copper or iron after the RTA annealing. The iron-enhanced diffusion toward the gettering layer was discovered. Optimal temperatures and times were proposed for the gettering effect obtained. Gettering effect model connected with metal precipitation kinetics and point defect injection at the RTA were suggested. The results obtained have shown the significant influence of the in-situ US treatment on the defect formation during argon or boron implantation in silicon. The defect concentration decreases both the as-implanted and post-annealed samples, implanted with the US treatment. The suppression of boron-enhanced diffusion under the US treatment was found. The physical model of this effect connected with the stimulated silicon interstitial diffusion under the US treatment was proposed.