Teselko P. Influence of thermal annealing on dislocation-dopant structure of crystals

Українська версія

Thesis for the degree of Candidate of Sciences (CSc)

State registration number

0406U001742

Thesis Registration Form

0406U001742.pdf

Applicant for

Specialization

  • 01.04.07 - Фізика твердого тіла

17-04-2006

Specialized Academic Board

Д 26.001.23

Taras Shevchenko National University of Kyiv

Essay

The objects are structural defects both which introduced in monocrystals and which arise up in the monocrystals under thermomechanical treatment; the purposes are the investigation of evolution of dislocation-dopant structure of semiconductor monocrystals under strain aging and study of changing of diffraction pictures of X-ray scattering under this evolution; the methods are triple-crystal diffractometry, four-bearing loading, preferential chemical etch, microindenting; the novelty - the anisotropy of X-ray scattering by the ordered dislocation structure has been proved, essential acceleration of the oxygen solid solution in strained area of Cz-Si crystal has been observed; the main results - the methods of calculation of defects parameters was proposed, the method of integral estimation of crystal structural perfection was patented; the fields are solid state physics, semiconductor industry.

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