Zhugayevych A. Hopping transport and luminescence kinetics of nanostructured silicon

Українська версія

Thesis for the degree of Candidate of Sciences (CSc)

State registration number

0406U004207

Thesis Registration Form

0406U004207.pdf

Applicant for

Specialization

  • 01.04.07 - Фізика твердого тіла

26-10-2006

Specialized Academic Board

Д 26.159.01

Institute of physics of NAS of Ukraine

Essay

The thesis deals with the investigation of longtime kinetics of the photoluminescence decay of silicon nanostructures. The origin of the anomalously small Beckerel index and its nonmonotonic temperature dependence is explained by multiple retrapping of carriers on their way to recombination. This phenomenon is an indicator of initial carriers separation and gives the estimate of the value of this separation. A method of reconstruction of effective distribution of activation energy of trap states by longtime asymptotics of luminescence decay of the trapped carriers is developed and applied to porous silicon. It is shown that in full analogy with thermostimulated luminescence the investigations of time and temperature dependence of longtime luminescence decay provide information about trapping states in a system.

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