Dovganyuk V. Defect structure changes in silicon crystals after high-energy irradiation by the methods of high-resolution Х-ray diffractometry.

Українська версія

Thesis for the degree of Candidate of Sciences (CSc)

State registration number

0406U004997

Thesis Registration Form

0406U004997.pdf

Applicant for

Specialization

  • 01.04.07 - Фізика твердого тіла

01-12-2006

Specialized Academic Board

Д 76.051.01

Essay

Proposed model of Cz-Si crystals with large number of dominant types of defects allows qualitative and quantitative describing the results of research by the X-ray rocking curve method and total integral reflectance method. The dynamics of concentration and size changes of dominant microdefects was explored before and after irradiation of Si-crystals. It is detect the heterogeneous distribution of microdefects of crystal thickness.

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Files

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