Synduchkov I. The working оut of the low-noise amplifiers for the millimetre wave band, using of modified model high-electron mobility transistors

Українська версія

Thesis for the degree of Candidate of Sciences (CSc)

State registration number

0407U001431

Thesis Registration Form

0407U001431.pdf

Applicant for

Specialization

  • 05.12.13 - Радіотехнічні пристрої та засоби телекомунікацій

21-03-2007

Specialized Academic Board

Д 26.861.01

State University of Telecommunications

Essay

The оbject is the low-noise amplifiers and the low-noise receiving devices of millimetrе wave range. The purpose is the research and working out of the low-noise amplifiers, receiving communication systems of millimeter range. The methods are the analytical method of design (medelling) in the mеllimetric range of transistors with high mobility of electrons; topology of coordinate chains of transistors; electric and structural-technological parameters of the low-noise amplifiers and the low-noise receiving. The results are a number of the low-noise amplifiers and the low-noise receiving devices has been worked out and put into practice (compared with the best foreign standards. The brunch of using is engineering sciences.

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Files

Автореф-Тит-укр..doc

Автореф..doc

АвторефТит-2-укр.doc

Диссертация--ГЛАВА 2-новая.doc

Диссертация--ГЛАВА 3-нов.doc

Диссертация--ГЛАВА 4-нов..doc

Диссертация--Глава 1-нов.doc

Диссертация--Заключение-нов.doc

Диссертация--Литература-нов.doc

Диссертация--Приложения.doc

Диссертация--Титул, содерж. введ-кор..doc

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