Vidolob V. Usage of laser methods in problems of diagnostic and metrology by effecting optoelectronic components of radio electronic means of arms

The thesis is dedicated to usage of laser methods in problems of diagnostic and metrology by effecting optoelectronic items of radio electronic means of arms. The single-wavelength СО2-laser, stabilized on power, with external modulation by momentums of millimicrosecond duration is built, which one has output power of radiation of 1,5 W, beam divergence of radiation of 2,5*10-3 rads., pulse repetition frequency 1 … 100 Hz. The experimental outcomes peak(amplitude) and phase modulation of radiation of such laser ( 10,6 micron) are obtained, which one passes through a single crystal CdS. The technique of an amplitude modulation of radiation of the СО2-laser with usage of chips CdS and GaAs is designed. The depth of an amplitude modulation of such laser reaches 40 % for single-crystal Membranulas CdS 3-4 microns. Is advanced phase metera method of testing optical and physical characteristicss of semiconducting connections А2В6, А3В5 with application of the СО2-laser. The techniques of research of a lifetime of charge carriers are designed model of intercoupling of an optical non-uniformity and structural defects of chips. The technique of obtaining of IR-light emitting Diodes with a heightened radiated power is offered.