Voytsekhovska O. Nonlinear properties of combined transistor negatrons and automatic devices on the basis of them

The object of the research is the process of transformation of information signal in specialized information processing devices with frequency definition. The subject of the research is the combined transistors negatrons and automatic devices on their basis. The methods of the research are based on the theory of the non linear nets, theory of matrix, stability and conformal image theory, sensitivity theory, theory of analyses of electronic diagrams, theory of planning of experiment and computer simulation. The objective of the research is the improvement of the technical characteristics (temperature stability, differentiation between the channels, transformation factor) of the information devices of automatics due to the usage of non linear characteristics of the combined transistor negatrons. Theoretical and practical results - there had been suggested the new approach to the optimum excitation of the combined transistors negatrons and their Y-parameters in the regime of big signal; the mathematicalmodels of parametric and non-linear operating modes of such negatrons had been further developed; there had been developed the mathematic models for estimation of the value of the reliability and saturating level of the combined negatrons on the bipolar transistors and estimation of the maximum - achievement capacity value of the generated oscillation of the devices on negatrons, which use the polar transistors; there had been developed the bases for the designing of the automated devices, which use the non linear properties of the combined transistor negatrons; there had been developed and researched the new diagrams of the automated devices with better technical characteristics. The level of implementation - within the industry. The sphere (brunch) of application - electronics.