Kizjak A. Processes of tunneling and charge build-up in thin and ultrathin SiO2 films.

Українська версія

Thesis for the degree of Candidate of Sciences (CSc)

State registration number

0408U000090

Thesis Registration Form

0408U000090.pdf

Applicant for

Kizjak Anatolij Yurijovich

Specialization

01.04.07 - Фізика твердого тіла

Date of defense

21-12-2007

Specialized Academic Board

Д 26.199.01

V. Lashkaryov Institute of semiconductor physics

Essay

Experimental results on potential (charge) distribution over the film depth for SiO2 grown at different temperatures are obtained. The mechanism of charge formation during silicon oxidation and gamma-irradiation is suggested. The effect of the built charge on the oxidation kinetics and tunnel charge transfer is considered.

Thesis supervisor

Evtukh Anatoli Antonovich

Official opponents

Назаров Олексій Миколайович
Литвиненко Сергій Васильович

Files

Disertation.doc

aref.doc

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