Kochelab E. Physical modeling the evolution of microdefect system in the supersaturated solid solution

Українська версія

Thesis for the degree of Candidate of Sciences (CSc)

State registration number

0408U000643

Thesis Registration Form

0408U000643.pdf

Applicant for

Specialization

  • 01.04.07 - Фізика твердого тіла

12-02-2008

Specialized Academic Board

Д 26.168.02

G. V. Kurdyumov IMPh of the N.A.S.U.

Essay

The physical model has been developed to describe nucleation, growth, and dissolution of the complex system of nano- and microsized defects in the supersaturated solid solution of oxygen in silicon. The evolution of size distribution functions for defects in this system consisting of volume new phase particles (oxygen precipitates) and pores as well as flat agglomerates of silicon interstitials (dislocation loops) has been described by the system of discrete and continuous differential kinetic equations. The conservation laws for point defects have been described by the set of diffusion equations for oxygen and silicon interstitials, and vacancies with account for boundary conditions at the crystal surface.

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