Kolosyuk A. Peculiarities of Radiation Defect Formation in Silicon Single Crystals under Electron Irradiation at High-Temperature

Українська версія

Thesis for the degree of Candidate of Sciences (CSc)

State registration number

0408U004840

Thesis Registration Form

0408U004840.pdf

Applicant for

Specialization

  • 01.04.07 - Фізика твердого тіла

30-10-2008

Specialized Academic Board

Д 26.159.01

Institute of physics of NAS of Ukraine

Essay

The temperature dependence (in range 100-633 K) of the kinetics of radiation defects (RD) creation in n-Si crystals under 1-MeV electron irradiation has been studied. Possibility of secondary RD accumulation at temperatures above the temperature of their full annealing is shown experimentally. Radiation stimulated annealing of vacancy-oxygen complexes due to crystal ionization is shown. The temperature dependence (in range 125-630 K) of the efficiency of free vacancies generation has been experimentally obtained and analyzed in n-Si under electron irradiation. The interaction of "hot" atoms and phonons is proposed to be a mechanism of the temperature influence on the efficiency of free vacancies generation. It is shown experimentally, that the formation of V2O complexes is responsible for the effect of "negative" annealing of nonequilibrium charge carriers lifetime.

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