Kazemirs'kyy T. High resolution X-ray diffractometry structural disorders of surface layers Si crystals and CdHgTe, YLaFeO after ion implantation

Українська версія

Thesis for the degree of Candidate of Sciences (CSc)

State registration number

0409U005410

Thesis Registration Form

0409U005410.pdf

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Specialization

  • 01.04.07 - Фізика твердого тіла

22-10-2009

Specialized Academic Board

Д 76.051.01

Essay

The results of X-ray structural research of near-surface regions band structures (111) CdTe and (110) CdTe, fell from high-temperature epitaxial layers in pairs of basic components and arsenic ions are implanted are carried out. Structural changes in crystal Si caused by the influence of chemical etching, ion implantation of phosphorus and their combined action. Diffuse scattering component analysis conducted on the basis of generalized dynamic theory of scattering. The model of possible dominant structural defects in modified chemical etching and ion implantation of surface layers of silicon.

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