Koplak O. Magnetic field induced alterations of the defect-impurity state and of the physical characteristics of silicon crystals

Українська версія

Thesis for the degree of Candidate of Sciences (CSc)

State registration number

0410U004600

Applicant for

Specialization

  • 01.04.07 - Фізика твердого тіла

26-10-2010

Specialized Academic Board

Д 26.168.02

G. V. Kurdyumov IMPh of the N.A.S.U.

Essay

The magnetic field induced alterations in the state of defects and impurities in silicon and changes of its optical, electro-physical and structural characteristics were found. The regularities of the influence of low permanent magnetic field (В=0.17 Т) on the relaxation processes in development of physical-chemical and structural-dependent properties of Si were explored. On the basis of the experimental results obtained a mechanism of relaxation of the magnetic field induced reconstruction of the defect-impurity state in Si has been suggested.

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