Koplak O. Magnetic field induced alterations of the defect-impurity state and of the physical characteristics of silicon crystals

Українська версія

Thesis for the degree of Candidate of Sciences (CSc)

State registration number

0410U004600

Thesis Registration Form

0410U004600.pdf

Applicant for

Specialization

  • 01.04.07 - Фізика твердого тіла

26-10-2010

Specialized Academic Board

Д 26.168.02

G. V. Kurdyumov IMPh of the N.A.S.U.

Essay

The magnetic field induced alterations in the state of defects and impurities in silicon and changes of its optical, electro-physical and structural characteristics were found. The regularities of the influence of low permanent magnetic field (В=0.17 Т) on the relaxation processes in development of physical-chemical and structural-dependent properties of Si were explored. On the basis of the experimental results obtained a mechanism of relaxation of the magnetic field induced reconstruction of the defect-impurity state in Si has been suggested.

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Files

aref.doc

aref.doc

dis.doc

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