Litvinchuk T. Х-ray diffractometry of defect structure changes in silicon crystals after irradia-tion by high energy electrons.

Українська версія

Thesis for the degree of Candidate of Sciences (CSc)

State registration number

0410U004924

Thesis Registration Form

0410U004924.pdf

Applicant for

Specialization

  • 01.04.07 - Фізика твердого тіла

30-10-2010

Specialized Academic Board

Д 76.051.01

Essay

The thesis devoted to the choice of structural transformations mecha-nisms and the model of defect structure Cz-Si single crystals, which allow all complication of structural changes in these crystals after the irradiation by high-energy electrons on the base of analysis of investigations by the meth-ods of two- and triplecrystal spectrometry in the mode of -2Q scanning and computer modeling are adequately described.The quantitative characterization of complex microdefect structures in silicon crystals grown by Czochralski method and irradiated with various doses of high-energy electrons (Е 18 МеВ) has been performed by methods of the high-resolution X-ray diffractometry.

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