Struk A. The peculiarities of the diffraction contrast of the dislocations and their complexes in Si crystals in the sectional and projectional X-ray topography

Українська версія

Thesis for the degree of Candidate of Sciences (CSc)

State registration number

0410U004951

Applicant for

Specialization

  • 01.04.07 - Фізика твердого тіла

30-10-2010

Specialized Academic Board

Д 76.051.01

Essay

The thesis is dedicated to the investigation of the mechanisms and laws of the X-ray diffraction images formation of dislocations and dislocation loops and their complexes in Si crystals with respect to their placement and availability of macro-deformation fields. The influence of the combined distortions from the dislocations and the external macro-deformation fields on the dimensional distribution of the in-tensity was investigated. The contribution and role of different mechanisms in the dislocation images formation were investigated with respect to their lo-cation, size and character of the change of the total deformation fields.

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