Voloschuk S. High-energy electronic accommodation of energy interaction of hydrogen atomic streams with zinksulfids crystal phosphorous UV light stimulated

Thesis deals with investigation of electronic effects, which is appearing at low-energy atomic particles interaction with the surface of wide-band solids, which is in equilibrium or in electronic excited metastable state under UV radiation. It was revealed that preliminary UV excitation samples ZnS and ZnS,CdS-Ag at Т<=250К and Т<=200К lead to increasing speed of energy accommodation of atoms H heterogeneous recombination by the electronic channel on 3-5 orders of the value, according to non UV excited samples. It was found that at zinksulfids ZnS-Tm; ZnS; ZnS,CdS-Ag and Zn2SiO4-Mn, which is under H-atoms effect and were in electronic excited state, ratio of H-atoms reaction interaction velocity at surface by the impact Rideal-Eley and diffusion Lengmuire-Hinshelwood mechanisms may be changing. Construction principle of high sensitive solid chemiluminescent sensor for the H-atoms concentration determination at range nН = 102-108 см-3 was elaborated. Principle based at preliminary UV-light excitation ZnS,CdS-Ag and further it excitation at interaction acts with atomic particles from two apart different density beams: etalon and unknown. Experimental sensor sample based on this principle was created.