Kirichenko M. The improvement of silicon solar cells for large-scale application and methods of their attestation

Object: Photoelectric processes in single-crystal silicon solar cells (Si-SC) with horizontal and vertical rectifying junctions. The purpose: The development of physical and technological bases for new construction-technological solutions of Ukrainian single-crystal Si-SC to increase their efficiency while reducing the cost of such Si-SC, a significant modernization of the existing set of equipment and methods for standardization Si-SC base crystals, and single-crystal Si-SC themselves, investigate the possibility of effective using single-crystal Si-SC in a new capacity - as sensors of modern optical location systems. Methods: Optical and scanning electronic microscopy, spectrophotometry, measuring the current-voltage characteristics, the photoconductivity, the open circuit voltage. Results: Is carried out the substantional modernization the complex of equipment and methods for standardization base crystals and Si-SC. Physical and technological bases of Si-SC new construction-technological solutions, based on the improvement of solar cells electronic parameters, using a base crystals with n- and i(n-)-type of conductivity and creation the optimum light trapping system. It is shown the possibility of multijunction Si-SC with vertical diode cells efficiency increase by introduction along the borders of diode cells reflectors from n+-ITO and the possibility of using such Si-SC as a sensors in optical location systems. Field of application: solid state physics, solar energetics, microelectronics.