Malakhov V. Optoelectronic properties of InN polycrystalline films

Українська версія

Thesis for the degree of Candidate of Sciences (CSc)

State registration number

0411U000839

Thesis Registration Form

0411U000839.pdf

Applicant for

Specialization

  • 01.04.07 - Фізика твердого тіла

02-03-2011

Specialized Academic Board

Д 26.207.01

Institute for Problems in Materials Science

Essay

A thesis deals with study of optical properties and an electronic structure in energy range from 0,025 to 60,0 eV of InN polycrystalline films, obtained by direct low temperature plasma-chemical synthesis from indium and nitrogen.

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Files

aref.pdf

dis.pdf

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