Taran A. Phase composition and structure of ternary Cu-In-Se film system with chalcopyrite lattice prepared by energy-saving methods

Object: the Cu-In-Se films, obtained by simultaneous and sequential deposition of indium selenide and copper and the CuInSe2-ZnSe film heterosystem. The purpose: revealing of the physical processes and phenomena which occur during the growth of base and buffer layers of film solar cells by energy-saving methods and determination of the relationship between the phase composition and defect structure. Methods: transmission electron microscopy (ЕМV-100L and PЕМ-125К) with the use of electron diffraction techniques, microdiffraction of the chosen area and of the bright-field and dark-field images. Scanning electron microscopy RЕММА-101А with the device for elemental microanalysis. Results: The Cu-In-Se thin films of variable composition were obtained using the Vekshinsky technique on glass-enamel, on (001) KCl crystals and KCl with a PbS sublayer at 400oC. There were revealed the CuSe2 + alpha-CIS, alpha-CIS, (alpha + beta)-CIS, beta-CIS, (beta + gamma)-CIS + In4Se3 phase areas corresponding to the pseudo-binary Cu2Se-In2Se3 phase diagram. By means of electron microscopy the defect structure of alpha-CIS, (alpha + beta)-CIS, beta-CIS films was studied. It was found that the grain structure of these films is modulated. The grains contained lamellas with microtwins along the (112) planes. In addition, in beta-CIS films the antiphase boundaries oriented along the (100), (010) planes and stacking faults along the (001) planes were found. The field of application: solid state physics, physics of thin films, nanophysics