Chursanova M. Interrelation of the metallized semiconductor substrates morphology and surface enhanced Raman scattering by molecules and inorganic clusters

Українська версія

Thesis for the degree of Candidate of Sciences (CSc)

State registration number

0411U003275

Applicant for

Specialization

  • 01.04.07 - Фізика твердого тіла

27-04-2011

Specialized Academic Board

Д 26.199.01

V. Lashkaryov Institute of semiconductor physics

Essay

The thesis is dedicated to the investigation of properties of nanostructured metallized semiconductor substrates for the surface enhanced Raman scattering (SERS) spectroscopy, namely self-arranged nanoisland films Ag/Si, metallized porous silicon and metallized biomorphic silicon carbide. Optimal morphological parameters of silver nanoisland films, formed at silicon substrates, which correspond to the highest Raman signal enhancement for different analytes are found. These parameters are the array of densely situated and homogenous in size nanoislands with lateral dimensions about 100-150 nm. It is determined that for the SERS spectroscopy of low concentration of semiconductor quantum dots of core (CdSe) - shell (ZnS) type about 3 nm in diameter, which are deposited on the Ag/Si substrate, the combination of two factors is required: plasmon excitation in the nanoislands by laser radiation and correspondence of its energy to the electron transition energy inside the quantum dot. Surface enhanced Raman scattering from the residual clusters of carbon and silicon in the biomorphic SiC is obtained. It is revealed that covering bio-SiC with thin silver film allows to investigate deposited analytes as well as surface structure of bio-SiC itself.

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