Mykhaliuk O. Kinetics of the solid solution decade of the oxygen in silicon

Українська версія

Thesis for the degree of Candidate of Sciences (CSc)

State registration number

0411U003647

Thesis Registration Form

0411U003647.pdf

Applicant for

Specialization

  • 01.04.07 - Фізика твердого тіла

23-05-2011

Specialized Academic Board

Д 26.001.23

Taras Shevchenko National University of Kyiv

Essay

The thesis is devoted to the experimental study of the process of formation and growth of defects during the isothermal decomposition of solid solution of oxygen in Cz-grown silicon. The influence of the preliminary neutron irradiation and crystal applied mechanical stress on the process kinetics was investigated. A new technique for the experimental determination of defect distribution by size and concentration was proposed. It was found that applied compressive stress speeds up the decomposition of a solid solution of oxygen in silicon during isothermal treatment.

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Files

aref_Mykhaliuk.pdf

dis_Mykhaliuk.pdf

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