Babich A. Surface and tunnel effects in the metal nanostructures

Surface characteristics not deformed and elastic deformed polycrystals and monocrystals Na, Cu, Au, Zn, Al, covered by an insulator layer is investigated within the limits of the self-consistent Kohn-Sham calculations a density functional theory and models of stable jellium. It is shown that the effect of a dielectric covering results to "drawing out" a tail of spatial electron distribution and effective potential for metal surface and to reduction of work function with increase of a dielectric covering constant. Heating of an electronic subsystem metal cluster is investigated within the limits of two-temperature model. The dependence of effective electronic temperature from an external bias voltage is estimated with use dimensional dependence of Debye temperature. The simple scheme of electronic heating which allows calculating successfully dimensional dependence of temperature of an electronic subsystem of a granule is offered. A method of calculation the broadening levels in granules-disks of three-electrode tunnel structure within the limits of formalism scatterings S-matrix is developed. The dependence of the broadening levels from geometrical parameters of a structure is calculated. The theory of single electronic tunneling is modified. Model the single-electronic transistor considers the broadening levels and electron heating of granules. The answer to a principle question of single-electronic: smoothness current-voltage curve of molecular transistors at low temperature is given.