Chernov D. Calculation methods and designing improvement of active class-E devices on Field-Effect Transistors

Українська версія

Thesis for the degree of Candidate of Sciences (CSc)

State registration number

0411U004698

Applicant for

Specialization

  • 05.12.13 - Радіотехнічні пристрої та засоби телекомунікацій

05-10-2011

Specialized Academic Board

К 70.052.04

Essay

The dissertation is devoted to theory improvement and regularities revelation of the high-frequency class-E amplifiers and oscillators on field-effect transistors with composite circuit in output signal controlling mode with constant, changing, and tuned load. A lock-in range of injection-locked Class E oscillator for the different injections ways - by means of resistive and inductive coupling was theoretically and exper-imentally obtained for different synchronizing source voltage. The class-E oscillator characteristics were measured in the synchronization mode. The analysis of double-mode class E oscillator on MOSFET with large power factor (output power is much greater than MOSFET driving power) with load signifi-cantly different from calculated was carried-out. The waveforms at active device and starting frequency were obtained. The problem of providing the required phase shift and power factor in the double-mode Class-E oscillator load network was solved. The calculation of such an oscillator with high power factor on example of electronic ballast was presented. The calculation method of Class E oscillator was improved, which differs from existing one by analytical solution of equation, which describes phase balance and resistances matching in the Class-E oscillator network. Since, the solution is ambigu-ous, the recommendations for choosing the correct one are given.

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