Deyneko N. The physical basis of constructive and technological solutions of back contacts of thin film solar cells based on cadmium telluride

Українська версія

Thesis for the degree of Candidate of Sciences (CSc)

State registration number

0413U005100

Applicant for

Specialization

  • 01.04.07 - Фізика твердого тіла

25-06-2013

Specialized Academic Board

Д 64.245.01

Institute of Electrophysics & Radiation Technologies NAS of Ukraine

Essay

Object: back contacts of film solar cells based on CdS / CdTe. The purpose: development of physical and technological bases and working out of constructional and technological solutions of forming of the back contact for different types of degradation-resistant and effective film solar cells based on sulfide and telluride of cadmium. Methods: thermal vacuum evaporation, non-reactive magnetron sputtering, centrifuge treatment, measurement of light current-voltage characteristics, dark current-voltage characteristics and the farad-voltage characteristics, methods of scanning electron microscopy. Results: first found out that the absence of the interphase interaction between the copper layer and base layer of telluride of cadmium limits the efficiency of the back contact of solar cell film on ITO/CdS/CdTe by forming the device structure during operation mode "through diode". For the first time solar cell based on cadmium telluride and sulfide after part degradation by exposing under forward bias voltage n-p heterojunction held their recovery. Field of application: solid state physics, semiconductor physics, solar energetics

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