Kalinichenko D. The evolution of the structure and physical properties of silicon stimulated by a magnetic field

Українська версія

Thesis for the degree of Candidate of Sciences (CSc)

State registration number

0415U001765

Thesis Registration Form

0415U001765.pdf

Applicant for

Specialization

  • 01.04.07 - Фізика твердого тіла

30-03-2015

Specialized Academic Board

Д 26.001.23

Taras Shevchenko National University of Kyiv

Essay

For the first time, it was found that the impact of a weak magnetic field to change the lattice parameter of silicon single crystal. It is shown that magnetic treatment leads to relaxation of internal stresses of subsurface layers of silicon. It is shown that magnetic treatment changes the defect-impurity composition of surface and subsurface layers of silicon crystals. Established that the application polymer coating on silicon crystals leads to improved electrophysical characteristics of these samples.

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