Kulyk N. The Influence of stressed heteroboundary on electronic, diffusion and electrical properties nanoheterosystems.

Українська версія

Thesis for the degree of Candidate of Sciences (CSc)

State registration number

0416U001471

Thesis Registration Form

0416U001471.pdf

Applicant for

Specialization

  • 01.04.07 - Фізика твердого тіла

03-03-2016

Specialized Academic Board

К 41.053.07

Essay

In this paper is theoretically investigated the influence inhomogeneously deformed heteroboundary quantum dot - matrix on the quantum states charges localized in a quantum dot, on spatial-temporal redistribution of defects in stressed nanoheterosystem GaAs/InxGa1-xAs/GaAs and electrical properties of surface-barrier structure of type Schottky with built layer of quantum dots in the area of spatial charge of semiconductor.

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