Stanchu H. High resolution X-ray diffractometry of GaN and graded AlGaN films and nanowires

Українська версія

Thesis for the degree of Candidate of Sciences (CSc)

State registration number

0416U005192

Thesis Registration Form

0416U005192.pdf

Applicant for

Specialization

  • 01.04.07 - Фізика твердого тіла

07-09-2016

Specialized Academic Board

Д 26.199.01

V. Lashkaryov Institute of semiconductor physics

Essay

Based on HRXRD, the structural and deformation state of GaN and graded AlGaN layers and NWs was investigated. A theoretical model to study the micro- and macro-deformation profiles in GaN NWs was developed. The influence of silicon nitride nanolayer on the conditions for NWs nucleation and in-plane orientation are explained. A method based on a laboratory X-ray diffraction experiment which allows for the efficient measurement of composition/strain distribution as functions of depth in the graded AlGaN layers was presented.

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Files

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