Kryvetskyi V. Ostwald ripening of the complicated semiconductor nanocrystals, catalytic nanoparticles and carbon nanotubes

Українська версія

Thesis for the degree of Candidate of Sciences (CSc)

State registration number

0417U002822

Applicant for

Specialization

  • 01.04.07 - Фізика твердого тіла

30-06-2017

Specialized Academic Board

Д 76.051.01

Essay

The dissertation is devoted to determining the growth mechanisms and size distribution of quantum dots in InAsSbP/InAs(100) heterostructure, catalytic platinum and palladium nanoparticles (NP) and their binary alloys on different substrates, and single-layer carbon nanotubes (CNT) during Ostwald ripening (OR). To this purpose the comparison of experimental histograms of the researched nanoobjects with theoretically defined distributions was made. It is demonstrated that the experimental histograms are quite well described by either GDLSW or ChWGD. It was established that the growth of the abovementioned nanoobjects is taking place according to both diffusion and Vagner mechanisms simultaneously during Ostwald ripening.

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