Mirzoiev I. Transport properties of conducting systems: quantum effects manifestation

The results of experimental study of transport properties and quantum effects in nanosystems based on silicon with embedded chromium disilicide nanocrystallites, and systems based on carbon nanotubes are presented. At low temperatures in conducting systems based on multilayered carbon nanotubes the quantum corrections to the conductivity due to weak localization of charge carriers and electron-electron interaction have been found. It is established that the resistance of carbon nanotubes after the process of functionalization increases insignificantly, while doping of pure nanotubes with nitrogen atoms leads to resistance decreasing about 6 times. The new features in the conductivity of quasi-two-dimensional systems based on various type conductivity silicon with embedded CrSi2 nanocrystallites have been observed: the appearance of conductivity over the quantum wells in the bottom of the conduction band and the presence of two transport channels (associated with a layer of nanocrystallites and the matrix crystal) at temperatures > 69 K. The linearity of the magnetoresistance at low temperatures and its value reducing with temperature increasing have been observed. It is shown that the charge carriers mobility at low temperatures is large (about 2,5104 cm2/Vs at 25 K).