Podust G. Conductivity and luminescence of ZnSe single crystals under X-ray excitation

Українська версія

Thesis for the degree of Candidate of Sciences (CSc)

State registration number

0418U003624

Applicant for

Specialization

  • 01.04.07 - Фізика твердого тіла

29-10-2018

Specialized Academic Board

Д 26.001.23

Taras Shevchenko National University of Kyiv

Essay

The thesis is devoted to the theoretical and experimental study of physical processes occurring in a high-resistance wide-gap semiconductor, single-crystal zinc selenide, using a wide spectrum of experimental techniques (studies of dark, photo and X-ray conductivity at various temperatures, phosphorescence and current relaxation, X-ray fluorescence spectra, thermostimulated conductivity and luminescence, and etc.). Complex experimental and theoretical studies of the luminescence and electrical properties of the semiconductor material during X-ray excitation were carried out, simultaneously recording of the conductivity and luminescence in the two channels was carried out. It was found that the small superlinearity of the experimental dark conductivity current-voltage characteristics is due to the Poole-Frenkel effect. It has been made the supplementation of the Poole-Frenkel theory for various potentials of interaction of a local center with a charge carrier. A multicenter model of crystallophosphorus is proposed and applied for theoretical description of the kinetics of conductivity and luminescence. Using this new model, we explained the laws of the accumulation of light sums in single crystals of zinc selenide and thus confirmed the failure of the classical theories of photoconductivity and photoluminescence in describing the physical processes occurring in high-resistance semiconductors under ionizing radiation.

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