Malyi Y. Properties of the gallium phosphide structure defects and their influence on LEDs parameters

Object of study: red and green LED structures based on gallium phosphide and GaAs1-xPx solid solutions. Subject of study: changes in electrophysical and optical characteristics of the output LED structures based on GaP and GaAs1-xPx and irradiated with electrons and fast neutrons of the reactor; the effect of ultrasonic treatment on them was also studied. The purpose of the study is to study the effect of simple and complex defects on the characteristics of the source and irradiated particles of different types of LEDs. The work was carried out: 1. Measurement of electroluminescence spectra of output and irradiated LEDs at different temperatures. 2. Measurement of volt-ampere characteristics (CVC) of output and irradiated LEDs at different temperatures. 3. Investigation of the influence of ultrasonic treatment (UZO) on the emissivity of the output and irradiated LEDs. Scientific novelty of the obtained results: 1. The maximum emission of 2,254 eV green GaP (N) diode arising at T = 77 K is genetically related to the exciton line bound on the isolated nitrogen atom and is its phonon repetition. Other radiation lines have been identified. 2. In the formation of an additional band in the spectrum of red GaP LEDs, donor-acceptor transitions between the uncontrolled impurity - tin and the main impurity - zinc, which penetrate from the contact area of ??the device are involved. 3. The model of formation of S-shaped section of negative differential resistance (VDO) on the CVC of GaP-LEDs at low temperatures was first proposed.