Sabov T. Ion-stimulated transformation of structure and optoelectric parameters of chromogenic and photosensitive structures

The thesis presents the results of a study of the ion implantation effect on the structure and functional properties of WO3, NiO, VOx thin films and InSb single crystals. The influence of ion implantation and temperature treatments on the optical and electrical characteristics of instrument structures based on the mis investigated. Techniques have been developed for determining the structural composition by SIMS and HRXHD methods at different stages of sample creation (deposition, implantation, annealing) to ensure the controlled formation of materials with desired characteristics. The dependences of the optical transmission of WO3 and NiO films on the dose of implanted hydrogen were determined. The influence of electrolyte composition on the stability of the electrochromic cell was investigated. The design of the electrochromic cell was optimized and prototype designs were created. A new method of synthesis of VOx films with high temperature coefficient of resistance and reproducibility of characteristicsis have been proposed. The change in structural and electrical parameters during the technological route is determined. The process of formation of p-n junction in InSb crystals by ion implantation was investigated. Optimal doping parameters were determined to improve the characteristics of the synthesized structures.