Slobodian O. Modification of structure and electronic properties of nanoporous carbon layers, graphene and graphene oxide exposed to ionizing radiation and temperature

Українська версія

Thesis for the degree of Candidate of Sciences (CSc)

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  • 01.04.07 - Фізика твердого тіла


Specialized Academic Board

Д 26.199.01

V. Lashkaryov Institute of semiconductor physics


The thesis presents the results of structural transformations and electronic properties of graphene under electron beam irradiation, as well as graphene oxide films and nanoporous carbon films under thermal annealing. The mechanism of charge carriers scattering for single layer graphene film onto SiO2\Si substrate, which is crucial in case of low dose high energy electron beam irradiation, has revealed. The process of the thermal annealing of the GO films in ambient conditions and narrow temperature range was studied. It was shown, that thermal annealing at temperature 250 ℃ during 5 min lead to decreases of electrical resistance up to 7 orders of magnitude. The method of nanoporous carbon films synthesis involving specific regime of planar magnetron sputtering technique was suggested and realized. It was shown, that thermal annealing of the films in inert atmosphere at temperatures up to 700 С results in significant graphitization, conductivity growth and decreases of the porosity. It was demonstrated that the films of reduced graphene oxide and nanoporous graphitized carbon films could be used for resistive gas sensors implementation.


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