Mykytiuk T. Electrical, optical and photoelectric processes in CdS/CdMgTe thin-film heterostructures

Українська версія

Thesis for the degree of Candidate of Sciences (CSc)

State registration number

0421U104048

Thesis Registration Form

0421U104048.pdf

Applicant for

Specialization

  • 01.04.10 - Фізика напівпровідників і діелектриків

17-12-2021

Specialized Academic Board

Д 76.051.01

Yuriy Fedkovych Chernivtsi National University

Essay

The results of investigation of the physical processes determined the electrical, optical and photoelectric characteristics of CdS/Cd1-xMgxTe thin-film heterostruc-tures are presented. The charge transport mechanisms are analyzed, the main pa-rameters of the material and heterostructure are determined. From the mathematical description of the spectral distribution of the photoelectric quantum yield of the CdS/Cd1-xMgxTe heterostructure, the effect of parameters of diode structure (thick-ness of the CdMgTe absorber layer, resistivity, the lifetime of charge carriers, con-centration of uncompensated acceptors) on the quantum efficiency of the CdS/Cd1 xMgxTe thin-film solar cell.

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Files

autoreferat-18 Автореферерат Микитюк Т.І.pdf

Дисертація Микитюк Т.І.pdf

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