Ovcharenko Y. Structure and electrophysical properties of metal films with the semiconductor overlayer under condition of chemical and diffusion interaction atoms

Українська версія

Thesis for the degree of Candidate of Sciences (CSc)

State registration number

0499U002433

Thesis Registration Form

0499U002433.pdf

Applicant for

Specialization

  • 01.04.07 - Фізика твердого тіла

23-09-1999

Specialized Academic Board

Д 55.051.02

Sumy State University

Essay

The electrophysical properties, structure, elements and phase composition of metallic films Cr, Ni, Cu, V, Sc under condition of interaction with atoms and molecules of residual gases or semiconductor overlayer Ge, Si (d<1 nm) were investigated. The decrease effect of the resistance temperature coefficient, the longitudinal strain coefficient and increase effect of the specula transmission coefficient (r) of grain boundary in films Cr and Ni were reveal by overlayer condensation and heating. It is explain of diffusion processes of atoms Ge in metal by grain boundary. Mass-spectrometry, electronоgraphy, electronic microscopy, measurement longitudinal strain coefficient, electromeasurement. Field of application of research - microelectronics.

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